Title: Refractory metal capped low resistivity metal conductor lines and vias formed using PVD and CVD
Application Number: 94115341 Application Date: 1994.09.15
Publication Number: 1120241 Publication Date: 1996.04.10
Approval Pub. Date: 2002.03.20 Granted Pub. Date: 2002.03.20
International Classifi-cation: H01L21/283;H01L21/768
Applicant(s) Name: International Business Machines Corporation Address:
Inventor(s) Name: Rajiv V. Joshi;Jerome J. Cuomo;Hormazdyar M. Dalal
Attorney & Agent: WANG YIPING
Abstract:
    Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten.
Time: 6
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