Title: Ammonia sensitive semiconductor elements and manufacture thereof
Application Number: 94116558 Application Date: 1994.09.21
Publication Number: 1129854 Publication Date: 1996.08.28
Approval Pub. Date: Granted Pub. Date: 1999.07.28
International Classifi-cation: G01N27/04,G01N27/12,H01L49/00
Applicant(s) Name: Beijing Polytechnical Univ. Address: 100022
Inventor(s) Name: Zou Deshu, Wang Dongfeng
Attorney & Agent: ZHANG HUI LOU GENJI
Abstract:
     The ammonia sensitative semiconductor device with 4 pins (one for drain and grid and others for source, heating resistor and N electrode of temp control diode respectively) for alarm, leakage detection, monitor and quantitative measurement of ammonia gas is composed of ammonia measuring transistor, heating resistor and temp control diode, all of which are integrated on the same silicon chip. On the basis of the conventional MOS technology, there are three additional steps: high-voltage DC sputtering of alumina and Pt layers and electric beam vaporation of zirconium oxide layer. Its advantages include high stability and reliability.
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