Title: Semiconductor device and manufacturing method for the same
Application Number: 98115594 Application Date: 1994.09.30
Publication Number: 1221223 Publication Date: 1999.06.30
Approval Pub. Date: 2006.04.05 Granted Pub. Date: 2006.04.05
International Classifi-cation: H01L29/786
Applicant(s) Name: Semiconductor Energy Laboratory Co., Ltd. Address:
Inventor(s) Name: Yasuhiko Takemura;Satoshi Teramoto
Attorney & Agent: wang zhongzhong
Abstract:
    A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
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