Title: Semiconductor device and a manufacturing method for the same
Application Number: 200610101853 Application Date: 1994.09.30
Publication Number: 1881620 Publication Date: 2006.12.20
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L29/786,H01L29/423,H01L27/12
Applicant(s) Name: Semiconductor Energy Lab Address:
Inventor(s) Name: Takemura Yasuhiko
Attorney & Agent: wang zhongzhong
Abstract:
     A semiconductor device of the present invention, including, the silica upon the insulating substrate having the insulator surface, the silica contains source electrode, leaking electrode and the channel between the source electrode and the leaking electrode; the gate electrode abuts the channel configuration, a gate insulator exists between the gate electrode and the channel; the doping region, whose doping concentration is lower than at least one of the leaking electrode doping concentration between the source electrode and the leaking electrode which set among the channel and the source electrode and the leaking electrode; and the layer with the silicon nitride upon the gate electrode and the silica having contact parts with the gate insulator, wherein the gate insulator abstains the first part upon the channel and the second part upon the doping region, furthermore, the thickness of the second part is thinner than that of the first one.
Time: 12