Title: Back reflector layer, method for forming it, and photovoltaic element using it
Application Number: 95116679 Application Date: 1995.08.24
Publication Number: 1125357 Publication Date: 1996.06.26
Approval Pub. Date: 2000.10.25 Granted Pub. Date: 2000.10.25
International Classifi-cation: H01L31/052;H01L31/18
Applicant(s) Name: Canon Kabushiki Kaisha Address:
Inventor(s) Name: Akiya Nakayama
Attorney & Agent: YANG GUOXU
Abstract:
    An object of the present invention is to provide a back reflector layer in a texture structure with a high reflectivity by preventing oxidation of a ground metal or alloy, and a method for forming it. A further object is to provide a photovoltaic element excellent in characteristics such as a conversion efficiency, and a process for fabricating it. The back reflector layer has a metal or alloy (hereinafter referred to as a first metal), and a transparent oxide of a second metal, formed on the first metal. A photovoltaic element is formed by forming a semiconductor junction on the back reflector layer.
Time: 14