Title: Semiconductor circuit for electro-optical device and method of manufacturing the same
Application Number: 95117182 Application Date: 1995.08.29
Publication Number: 1119789 Publication Date: 1996.04.03
Approval Pub. Date: 2002.01.23 Granted Pub. Date: 2002.01.23
International Classifi-cation: H01L21/00;H01L21/335;H01L21/70;H01L27/02
Applicant(s) Name: Semiconductor Energy Laboratory Company Limited Address:
Inventor(s) Name: Shunpei Yamazaki;Satoshi Teramoto
Attorney & Agent: MA TIELIANG XIAO JUCHANG
Abstract:
    In a monolithic active matrix circuit formed on a substrate, the active regions of at least a part of the thin film transistors (TFTs) constituting the peripheral circuit for driving the matrix region are added with a metal element for promoting the crystallization of silicon at a concentration of 1x10[16] to 5x10[19] cm[-3], no metal element is added to the active region of the TFTs for the matrix region. The channel forming regions of at least a part of the TFTs constituting the peripheral circuit and the channel forming regions of the TFTs for the matrix region are formed by a silicon semiconductor thin film having a monodomain structure.
Time: 12
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