Title: Semiconductor device and method of manufacturing the same
Application Number: 95117116 Application Date: 1995.09.01
Publication Number: 1132935 Publication Date: 1996.10.08
Approval Pub. Date: 2001.08.08 Granted Pub. Date: 2001.08.08
International Classifi-cation: H01L21/28;H01L21/324;H01L21/768;H01L23/52
Applicant(s) Name: K. K. Toshiba Address:
Inventor(s) Name: Tadashi matsuno
Attorney & Agent: MA TIELIANG WANG ZHONGZHONG
Abstract:
    A semiconductor device includes a substrate, an insulation film formed above the substrate and containing silicon-fluorine bonds, and a titanium-based metal wiring layer formed on the insulation film, the titanium-based metal wiring layer containing fluorine which is diffused from the insulation film and has a fluorine concentration of less than 1 x 10
Time: 15
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