Title: High shutoff voltage and thin type block-able gate transistor
Application Number: 95116824 Application Date: 1995.09.01
Publication Number: 1128904 Publication Date: 1996.08.14
Approval Pub. Date: 1998.10.14 Granted Pub. Date: 1998.10.14
International Classifi-cation: H01L29/745
Applicant(s) Name: ABB Management AG Address:
Inventor(s) Name: F. Ball;S. Aishinl
Attorney & Agent: DU YOUWEN WANG ZHONGZHONG
Abstract:
    The present invention provide a GTO which, starting from the anode-side main surface (2), comprises an anode emitter (6), a barrier layer (11), an n-base (7), a p-base (8) and a cathode emitter (9). The anode emitter (6) is designed as a transparent emitter and has anode short-circuits (10). By virtue of the combination of the barrier layer, the transparent anode emitter and the anode short-circuits, a GTO is obtained which can be operated at high switching frequencies, the substrate thickness of which can be reduced and which nevertheless exhibits no increase in the switching losses.
Time: 14