| Title: | Plasma treating device | ||
| Application Number: | 95115736 | Application Date: | 1995.09.13 |
| Publication Number: | 1132930 | Publication Date: | 1996.10.08 |
| Approval Pub. Date: | 2001.12.19 | Granted Pub. Date: | 2001.12.19 |
| International Classifi-cation: | H01J37/32;H01L21/3065;H05H1/24 | ||
| Applicant(s) Name: | Matsushita Electric Industrial Co., Ltd. | Address: | |
| Inventor(s) Name: | Okumura Tomohiro;Nakayama Ichiro;Yanagi Yoshihiro | ||
| Attorney & Agent: | SHEN ZHAOKUN | ||
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Abstract: |
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| A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil, a high frequency power source, and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable. Plasma is generated inside the vacuum vessel upon application of a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode. The invention is characterized in that said discharge coil is partially or wholly made to have a multiple spiral or helical configuration, the deteriorating in power efficiency due to a matching parallel coil of a discharge coil matching circuit and the temperature rise can be minished. | |||
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| Time: | 9 | ||
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