Title: Insulated-gate device (IG device) having narrowbandgap-source structure and method of manufacturing the same
Application Number: 95118446 Application Date: 1995.09.13
Publication Number: 1123470 Publication Date: 1996.05.29
Approval Pub. Date: 2000.05.24 Granted Pub. Date: 2000.05.24
International Classifi-cation: H01L21/336;H01L21/82;H01L27/108;H01L27/12;H01L29/78
Applicant(s) Name: Kabushiki Kaisha Toshiba Address:
Inventor(s) Name: Makoto Yoshimi;Satoshi Inaba;Atsushi Murakoshi
Attorney & Agent: MA TIELIANG ZHANG ZHIXING
Abstract:
    A structure of a semiconductor device and a method of manufacturing the same is provided wherein a leakage current can be reduced while improving a drain breakdown voltage of an Insulated-Gate transistor such as a MOSFET, MOSSIT and a MISFET, and a holding characteristic of a memory cell such as a DRAM using these transistors as switching transistors can be improved, and further a reliability of a gate oxide film in a transfer gate can be improved. More particularly, a narrow band gap semiconductor region such as SixGe1-x, SixSn1-x, PbS is formed in an interior of a source region or a drain region in the SOI.IG-device. By selecting location and/or mole fraction of the narrow band gap semiconductor region in a SOI film, or selecting a kind of impurity element to compensate the crystal lattice mismatching due to the narrow-bandgap semiconductor region, the generation of crystal defects can be suppressed.
Time: 6
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