Title: Method for making nonvolatile memory
Application Number: 95117705 Application Date: 1995.09.13
Publication Number: 1143253 Publication Date: 1997.02.19
Approval Pub. Date: 2002.07.10 Granted Pub. Date: 2002.07.10
International Classifi-cation: H01L27/115
Applicant(s) Name: Hyundai Electronics Industries Co., Ltd. Address:
Inventor(s) Name: Ahn Jae-Chun;Chang Hsi-Xian
Attorney & Agent: WANG ZHONGZHONG
Abstract:
    The present invention discloses a method of manufacturing a nonvolatile memory device. According to the present invention, in a nonvolatile memory device in which an equal voltage is applied to the control gates formed along both sides of the bit lines, the continuity of the control gates can be enhanced by interconnecting these control gates inside the cell arrays, resulting in a higher integration of the device and a reduction of the production of resistance therein, thereby improving the yield of the device.
Time: 15
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