Title: Fixed value storage cell arrangement and method of producing the same
Application Number: 95195345 Application Date: 1995.09.14
Publication Number: 1159865 Publication Date: 1997.09.17
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: H01L21/8246;H01L27/112
Applicant(s) Name: Siemens Aktiengesellschaft Address:
Inventor(s) Name: W. Krautschneider;L. Risch;F. Hofmann
Attorney & Agent: MA TIELIANG
Abstract:
    A read-only-memory cell arrangement comprises memory cells, each having a vertical MOS transistor, in a substrate (21) made of semiconductor material, the various logic values (zero, one) being implemented by gate dielectrics (27, 28) of different thickness. The memory cell arrangement can preferably be produced in a silicon substrate, with a small number of process steps and a high packing density. The memory cell arrangement and a drive circuit for read-out can in this case be produced in an integrated manner.
Time: 51