Title: Manufacturing method of semiconductor device
Application Number: 200410097810 Application Date: 1995.09.15
Publication Number: 1619771 Publication Date: 2005.05.25
Approval Pub. Date: 2007.06.06 Granted Pub. Date: 2007.06.06
International Classifi-cation: H01L21/00;H01L21/20;G02F1/136
Applicant(s) Name: Semiconductor Energy Lab Address:
Inventor(s) Name: Shunpei Yamazaki;Naoudo Kusumoto;Satoshi Teramoto
Attorney & Agent: liang yong
Abstract:
    In a producing a thin film transistor, a solution containing a metal element for promoting crystallization of silicon is added in contact with an amorphous silicon film, and then a silicide layer is formed by heating process. Further, after a region as crystal growth nucleus is formed by patterning the silicide layer, laser light is irradiated while heating process. As a result, crystal-growth is performed from the region as crystal growth nucleus in the amorphous silicon film, thereby to form monodomain regions corresponding to a single crystal. Also, before the solution is added, the amorphous silicon film may be subjected to plasma treatment.
Time: 15