Title: Method for producing semiconductor device
Application Number: 95117780 Application Date: 1995.09.15
Publication Number: 1123463 Publication Date: 1996.05.29
Approval Pub. Date: 2002.07.24 Granted Pub. Date: 2002.07.24
International Classifi-cation: H01L21/00;H01L33/00
Applicant(s) Name: Semiconductor Energy Laboratory Company Limited Address:
Inventor(s) Name: Shunpei Yamazaki;Naoto Kusumoto;Satoshi Teramoto
Attorney & Agent: XIAO JUCHANG YE KAIDONG
Abstract:
    In a producing a thin film transistor, a solution containing a metal element for promoting crystallization of silicon is added in contact with an amorphous silicon film, and then a silicide layer is formed by heating process. Further, after a region as crystal growth nucleus-is formed by patterning the silicide layer, laser light is irradiated during heating process. As a result, crystal-growth is performed from the region as crystal growth nucleus in the amorphous silicon film, thereby to form monodomain regions corresponding to a single crystal. Also, before the solution is added, the amorphous silicon film may be subjected to plasma treatment.
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