Title: Method of manufacturing a thin film semiconductor device
Application Number: 95118605 Application Date: 1995.09.16
Publication Number: 1129355 Publication Date: 1996.08.21
Approval Pub. Date: 2004.07.21 Granted Pub. Date: 2004.07.21
International Classifi-cation: H01L21/306;H01L21/308
Applicant(s) Name: Semiconductor Energy Laboratory Company Limited Address:
Inventor(s) Name: Hideomi Suzawa;Yasuhiko takemura;Shunpe Yamazaki
Attorney & Agent: XIAO JUCHANG YE KAIDONG
Abstract:
    The patent relates to a thin-film transistor to reduce a leakage current between source/drain of a thin-film transistor. Etch the silicon by means of a liquid or a non-ionized gas, to form an island-shaped silicon semiconductor regionhaving a tapered edge.Alternatively, the island-shaped silicon semiconductor region having the tapered edge is formed by means of a dry etching process, a part damaged by plasma is removed through etching of the edge part by means of the above-mentioned liquid or gas.A leakage current between source/drain caused by a part can be reduced. Failures such as disconnection occurring when a gate electrode crosses the island-shaped silicon region can also be reduced.
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