Title: Method for manufacturing semiconductor
Application Number: 01139471 Application Date: 1995.09.16
Publication Number: 1395286 Publication Date: 2003.02.05
Approval Pub. Date: 2006.10.18 Granted Pub. Date: 2006.10.18
International Classifi-cation: H01L21/00;G02F1/133;H01L21/20;H01L21/324
Applicant(s) Name: Semiconductor Energy Laboratory Co., Ltd. Address:
Inventor(s) Name: Setsuo;Yamazaki Shunpei;Kusumoto Naoudo
Attorney & Agent: zhang zhicheng
Abstract:
    In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.
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