Title: Method for producing semiconductor device
Application Number: 95118410 Application Date: 1995.09.16
Publication Number: 1127423 Publication Date: 1996.07.24
Approval Pub. Date: 2002.02.27 Granted Pub. Date: 2002.02.27
International Classifi-cation: H01L21/00
Applicant(s) Name: Semiconductor Energy Laboratory Company Limited Address:
Inventor(s) Name: Setsuo Nakajima;Shunpei Yamazaki;Naoto Kusumoto
Attorney & Agent: XIAO JUCHANG MA TIELIANG
Abstract:
    In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.
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