Title: Plasma processing device and exhaust ring
Application Number: 01816013 Application Date: 2001.11.02
Publication Number: 1461494 Publication Date: 2003.12.10
Approval Pub. Date: 2005.08.31 Granted Pub. Date: 2005.08.31
International Classifi-cation: H01L21/3065;H01J37/32
Applicant(s) Name: Tokyo Electron Ltd. Address:
Inventor(s) Name: Ogasawara Masahiro;Kato Kazuya
Attorney & Agent: long chun sha cha
Abstract:
    A plasma processing device, comprising an exhaust ring having a high resistance to plasma and capable of suppressing an abnormal discharge and a processing chamber (100), the processing chamber (100) further comprising a ceiling part (110) having an upper electrode (112) disposed thereon and a container part (120) having, therein, a lower electrode (122) disposed opposedly to the upper electrode (112) and allowing a processed body to be put therein, wherein the exhaust ring (126) is disposed around the lower electrode (122) so as to separate a plasma processing space (102) from an exhaust space (104) in the processing chamber (100), through holes (126a) and stop holes (126b) smaller in number than the through holes (126a) and opening to the plasma processing space (102) side are formed in the exhaust ring (126), and an insulation film formed of Y2O3 is coated on the surface of the exhaust ring (126) on the plasma processing space (102) side.
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