Title: Method forming submicron grooves in, for example, semiconductor material and device obtained by means of this method
Application Number: 85103535 Application Date: 1985.05.06
Publication Number: 1004765 Publication Date: 1986.11.05
Approval Pub. Date: Granted Pub. Date: 1989.07.05
International Classifi-cation: H01G4/06,H01L21/302,H01L21/31
Applicant(s) Name: N.V. Philips' Gloeilampenfabrieken Address:
Inventor(s) Name:
Attorney & Agent: LIN CHANGAN
Abstract:
     On a layer having a stepped relief, such as a masking layer having openings on a substrate region is provided a first layer, which, whilst maintaining the stepped relief, is covered by a second masking layer and a convertible layer. By conversion of the convertible layer (by means of ion implantation, oxidation, silicidation), this layer becomes selectively etchable. After removal of the non-converted parts, an intermediate mask is formed with an opening in the second masking layer along the edge of a depression. By means of the mask thus obtained, grooves are formed by anisotropic etching in the first layer and, as the case may be, in the subjacent substrate region. When grooves are formed in a substrate region of semiconductor material, these grooves may be filled with oxide for forming insulated regions. If a first layer of polycrystaline silicon is used on a substrate region of silicon, this layer can serve as a doping source and a connection, respectively.
Time: 9
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