Title: Metal-aluminium oxide-silicon construction humidity sensor and its fabricating technology
Application Number: 86102535 Application Date: 1986.10.17
Publication Number: 1018306 Publication Date: 1988.05.11
Approval Pub. Date: Granted Pub. Date: 1989.09.06
International Classifi-cation: G01R27/26,G01W1/02,H01G7/00
Applicant(s) Name: Shanghai Metallurgical Inst., Chinese Academy of S Address:
Inventor(s) Name:
Attorney & Agent: JI LIANGGAN SHEN DEXIN
Abstract:
     This invention is Al2O3 humidity sensor of Si-MOS construction, and belongs to components and devices for indicating environmental humidity. It can produce a stable porous 2-Al2O3 layer throgh aluminium evaporating and anodic oxdation, and heat treatment on the substrates of the low-resistance silicons, thus improves the Al2O3 humidity sensor, or solves the problem of long term drift, and it can measure absolute and relative humidity at the same time. Humidity sensor of the invention has a wide range, high sensitivity, good repetition and stability for measuring humidity. It can be widely applicabled for industrial process controls, environment humidity testing, water content analysis of various high purity gases, monitoring vestigial moisture content in gastight encapsulating electronic devices, and the research of reliability and failure mechanism of electronic devices.
Time: 10
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