Title: Method for making strontium titanate base grain-boundary layer capacitor material
Application Number: 94104452 Application Date: 1994.05.06
Publication Number: 1098397 Publication Date: 1995.02.08
Approval Pub. Date: Granted Pub. Date: 2000.09.06
International Classifi-cation: C04B35/46,H01G13/00
Applicant(s) Name: Qinnghua Univ. Address: 100084
Inventor(s) Name: Zhou Heping, Li Longtu
Attorney & Agent: DING YINGLIE
Abstract:
     The present invention relates to a SrTiO3 base crystal boundary layer capacitor material for capacitor. Said invention uses pure SrTiO3 obtained by decomposing SrTiO(C2O4).nH2O as raw material, and adds Li2CO3, etc. as sintering aid, Sr(1I1/4nB3/4)O3 as donor doping agent and Bi2I3 and SiO2 as crystal-boundary insulating agent, so that it can implement semi-conducting sintering at lower temp. of 1000-1200 deg.C in N2 H2 flowing gas, and then when its temp. is reduced to 650-900 deg.C, it can implement crystal-boundary insulating treatment in the air, so that the invented SrTiO3 base crystal-boundary layer capacitor material can be made up. Said method is simple in technological process, reduces sintering temp. and changes double sintering into single sintering, and its product properties are easy to control.
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