Title: Inorganic thin film humidity-sensitive element with high performance and its producing method
Application Number: 94111388 Application Date: 1994.07.16
Publication Number: 1117196 Publication Date: 1996.02.21
Approval Pub. Date: Granted Pub. Date: 1998.01.14
International Classifi-cation: G01N19/10,H01G7/00
Applicant(s) Name: Dongnan Univ. Address: 210018
Inventor(s) Name: Chen Guoping
Attorney & Agent: LOU GAOCHAO YAO JIANNAN
Abstract:
     On silicon plate, humidity-sensitive Ta2O5 medium film of 100-500 microns in thickness is deposited through physical gas-phase process, such as electron beam evaporation, RF sputtering or DC sputtering, and on its permeable electrode film, the 0.5-2 mm thick leading rings are produced via electroplating process. The said process can lower the cost of the thin film humidity-sensitive device, and raise its performance identity and reliability. The humidity-sensitive device of the present invention has a wide humidity measuring range, fast response speed and high stability, and it can operate in a high-temp. and high-humidity environment for a long time.
Time: 14