Title: MOS insulation processing
Application Number: 85104651 Application Date: 1985.06.15
Publication Number: 1001064 Publication Date: 1986.06.10
Approval Pub. Date: 1989.11.29 Granted Pub. Date: 1989.11.29
International Classifi-cation: H01C21/31;H01C21/76
Applicant(s) Name: Intel Corp. Address:
Inventor(s) Name: Elizabeth Lee Patterson
Attorney & Agent: XIAO CHUNJING
Abstract:
    A process for growing field oxide regions in an MOS circuit. An initial thermally grown layer of silicon nitride seals the substrate surface and reduces lateral oxidation, or bird
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