Title: Proparation for high temp. and positive temp. coefficient heat-sensitive semiconductor ceramic material
Application Number: 85108454 Application Date: 1985.11.23
Publication Number: 1011412 Publication Date: 1987.06.03
Approval Pub. Date: Granted Pub. Date: 1988.03.09
International Classifi-cation: C04B35/46,H01C7/02
Applicant(s) Name: Huazhong Polytechnical College Address:
Inventor(s) Name: Chen Zhixiong, Jia Liandi, Lai Xiwei, Liu Meidong,
Attorney & Agent: CHEN ZHILING ZHENG YOUDE
Abstract:
     A heat-sensitive semiconductive compact ceramic material of positive temp. coefficient, the curie point of which is higher than 310 deg.C, being adopted both rapid sintering and short-time heat-insulating techniques, may be effectively protected Pb volatilization and control the crystal grown-up. The resistivity of the material at room- temp. may be less than 1000 ohm.cm, the magnitude order of the resistivity ratio may reach to 4.
Time: 14
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