Title: Method for mfg. platinum film of temp. sensor
Application Number: 88105605 Application Date: 1988.11.16
Publication Number: 1042793 Publication Date: 1990.06.06
Approval Pub. Date: Granted Pub. Date: 1992.06.10
International Classifi-cation: C23C14/35,C23C14/40,G01K7/18,H01C7/00,H01C7/12
Applicant(s) Name: Shanghai Metallogical Inst., Chinese Academy of Sc Address:
Inventor(s) Name: Li Shengqiang
Attorney & Agent: SHEN DEXIN
Abstract:
     It adopts the high-frequency sputtering or the magnetic-control sputtering and uses platinum as target. Under the argon-oxygen atmosphere the polished ceramic substrate is sputtered, where in the oxygen-argon volume ratio of the argon-oxygen mixed gas of the sputtering atmosphere the oxygen is 5-30%, and the rest is argon. The sputtered platinum film is exposed to the treatment under stepped temperature rise in air and is insulated at 1000-1200 deg.c. The resistance-temperature coefficient (TCR) of the temperature sensor made of this platinum film is up to (3.850 minus or plus 10)X10 to the power -3 ohm/ohm deg.c, and therefore it is an economic and practical method for industrial production of the platinum film resistance temperature sensors.
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