Title: Method for enhancing sensitivity of gas-sensitive semiconductor component
Application Number: 91108927 Application Date: 1991.09.09
Publication Number: 1070283 Publication Date: 1993.03.24
Approval Pub. Date: Granted Pub. Date: 1995.02.08
International Classifi-cation: G01N27/12,H01C7/00,H01L49/00
Applicant(s) Name: Yunnan Univ. Address: 650091
Inventor(s) Name:
Attorney & Agent: ZHANG JIN
Abstract:
     Two different conduction types of gas-sensitive material are used to constitute P-N type or N-P type integral gas-sensitive device, which features that both materials are very sensitive to gas to be tested and their resistances RN and RP conform to the relationship RN RP for clean air or RN RP for not too high concentration of the gas to be tested. The sensitivity of the said device is equal to or greater than the product of the sensitivities of both materials, so obtaining high sensitivity. Additionally, the multiple of selectivity is implemented, thermal stability and early relaxation characteristics are improved and anti-moisture power is enchanced.
Time: 17