Title: Direct drawing of monocrystalline sillicon with nitrogen blanketing
Application Number: 85100295 Application Date: 1985.04.01
Publication Number: 1000297 Publication Date: 1986.02.10
Approval Pub. Date: Granted Pub. Date: 1986.09.03
International Classifi-cation: C30B27/02
Applicant(s) Name: Zhejiang University Address:
Inventor(s) Name: Li Liben, Lin Yuping
Attorney & Agent: LIAN SHOUJIN
Abstract:
     This invention uses nitrogen as the blanketing-gas during direct-drawing of monocrystalline silicon. The purity of the nitrogen should be above 99.999%, it flows into the furnace at a rate of 2-50 litres/minute, and the gas pressure in the furnace is O.5~60 Torr. On account of the abundance and the low price of nitrogen, the production cost of monocrystalline silicon can be greatly reduced.
Time: 10
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