Title: Technology for preparing polycrystal silicon ingot by orientational solidification and growth for solar battery
Application Number: 85100529 Application Date: 1985.04.01
Publication Number: 1002276 Publication Date: 1986.08.13
Approval Pub. Date: Granted Pub. Date: 1990.07.04
International Classifi-cation: C01B33/02,C30B11/02
Applicant(s) Name: Fudan Univ. Address:
Inventor(s) Name: She Xitong
Attorney & Agent:
Abstract:
     This invention relates to a process of taking deionzed water as medium, which is mixed with the processed powder of silicon nitride into paste as mold releasing agent; taking Ar and He as atmosphere;making the mold which is composed of high performance graphite blocks hang as the silicon powder fuses, but be supported by the down-rotating shaft cooled with water as the silicon solidifies, increasing the flow speed of the cooling water to make the fused silicon begin orientationally solidifying at the bottom of the mold as the mold falls. Thus a blowhole-free and crack-free and intact square-ingot can be made, the crystal grain of which is a cylinder in shape and the grain size of which reaches the millimetre grade, which may be controlled by doping, used for solar battery with high performance, the conversion efficiency of a overall area of which in optimum value may reaches 11.3%.
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