Title: Method of growing KTP monocrystal from the molten salt
Application Number: 85100836 Application Date: 1985.04.01
Publication Number: 1002170 Publication Date: 1986.08.06
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B9/04,C30B29/14
Applicant(s) Name: The Inst. of Artificial Crystals-Bureau of Nationa Address:
Inventor(s) Name: Huang Zhaoen
Attorney & Agent:
Abstract:
     This invention concerns a method for growing KTP monocrystal using KTiOPO4 cpd. as raw material and potassium poly-phosphate as flux. The equipment required for crystal growth, and their necessary parameters are presented. The ratio (wt.) of KTiOPO4 cpd. and potassium poly-phosphats is 1:19-2:3. The conditions for crystal growth are the temp. is first raised to 950-1100 deg.C and then lowered slowly to 920-800 deg.C, thus relative movement occurs in the melt. By maintaining a temp. gradient of 0.5-5 deg.C/Cm and a growth period of 10-60 days, KTP monocrystal of max. dimension 13X20X15 cubic mm can be produced.
Time: 8
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