Title: New technique for prepn of monocrystal silicon chip with perfact layer on the surface
Application Number: 85100856 Application Date: 1985.04.01
Publication Number: 1001220 Publication Date: 1986.07.02
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B29/06,C30B31/00,C30B33/00
Applicant(s) Name: Beijing Science Address:
Inventor(s) Name:
Attorney & Agent: LIU JIANMIN
Abstract:
     The present invention utilizes zone melting of monocrystal Si in afmosphere of H irradiated with neutron, Monocrystal Si chip, after cutting, grinding and polishing, is heat treated twice to obfain perfect surface layer of monocrystal Si chip due to inner H pptn., thus provides new possibility of obtaining Si materials for use in integrated circuit.
Time: 8
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