Title: Laser-heating recrystallization method to polycrystalline silicon on the insulated layer
Application Number: 85103942 Application Date: 1985.05.16
Publication Number: 1006177 Publication Date: 1986.12.24
Approval Pub. Date: Granted Pub. Date: 1988.12.21
International Classifi-cation: C30B1/00,C30B29/06,H01L21/268,H01L21/428
Applicant(s) Name: Shanhai Institute of Metallurgy, Chinese Academy o Address:
Inventor(s) Name: Lin Chenlu, Sheng Zongyong
Attorney & Agent: JI LIANGJIU
Abstract:
     This invention is about the manufacturing technique of semiconductor parts and integrated circuits. The laser-heating method is used to recrystallize the polycrystalline Si between two layers of SiO2 so that the SOI material of good surface qulity for manufacturing parts and integrated circuits can be obtained. This method is used with the common technique of integrated circuits, its technique is simple and the utilizing rate of the energy of laser is raised.
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