Title: Single crystal growing device
Application Number: 85106561 Application Date: 1985.08.31
Publication Number: 1009753 Publication Date: 1987.03.25
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B15/22,C30B35/00
Applicant(s) Name: Toshiba Co., Ltd. Address:
Inventor(s) Name:
Attorney & Agent: LI QIANG
Abstract:
     This invention consists of a pair of coils, which are situated on surrounding of the crucible used for melting the crystal. When coils are excited, magnetic forces are opposition each other along their axis thus forming uniformly distributed magnetic field in the elliptical shape. When the exciting current is suitably selected, field of the upper molten body is formed to limit heat convention, meanwhile, heat convention is produced in the lower part of the molten body. When the liquid surface is lowered by drawing of the single crystal, the magnetic field should be controlled for obtaining a correspondingly lowering of the boundary between the limit heat convection zone and the heat convention zone.
Time: 4