Title: Technology of tellurium dioxide single crystal growth
Application Number: 85107803 Application Date: 1985.10.09
Publication Number: 1010421 Publication Date: 1987.04.15
Approval Pub. Date: Granted Pub. Date: 1990.05.02
International Classifi-cation: C30B11/04,C30B29/46
Applicant(s) Name: Shanghai Silicates Research Inst. of C.A.S. Address:
Inventor(s) Name: Ge Zengwei
Attorney & Agent: PAN ZHEN NIE SHUYI
Abstract:
     This invention discloses a new method of single crystal formatin, by which various shaped single crystals with different directions of crystalline axis may be developed by means of the proposed crucible descending method. Thus rectangular, elliptic, rhombin and cylindric rod, plates or cylindralite growing along any direction of crystalline axis may be obtd. The dimension of crystal formed may be as large as (70-80) mm X (20-30( mm X 100 mm. Camparing with conventional drawing method for crystal formatim, this process is characterized by its simplicity in installation, no restrictim to drawing direction and crystal shape and practically no enviroment pollutim. Besides, the utilizatim rate of crystal may increase to an extent of 30-100%.
Time: 4
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