Title: Mixed source two sided silicon monocrystalline growth on insulating substrate
Application Number: 86100027 Application Date: 1986.01.06
Publication Number: 1012098 Publication Date: 1987.07.15
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B25/02,C30B25/22
Applicant(s) Name: Jilin Univ. Address:
Inventor(s) Name: Quan Baofu, Tang Guangping
Attorney & Agent: YANG DESHENG
Abstract:
     The invention is a chemical vapour silicon deposition process in the manufacture of semiconductor device and integrated circuit, the purpose of which is to realize the semiconductive material structure of "monocrystalline silicon/insulating material/monocrystalline silicon'. The invention is characterized by making the structural epitaxy to be accomplished in one step. The monocrystalline growth rate fast, the thickness homogeneous, and the quality superior; simple equipment, convenient for operation, no corrosiveness on insulating substrate by vapour phase and easy of use in production.
Time: 7