Title: Growth of double doped single domain thermal electricity releasing crystal ATGSAs in aqueous solution
Application Number: 86101972 Application Date: 1986.03.22
Publication Number: 1013602 Publication Date: 1987.09.30
Approval Pub. Date: Granted Pub. Date: 1989.11.08
International Classifi-cation: C30B7/08,C30B29/54
Applicant(s) Name: Shandong Univ. Address:
Inventor(s) Name: Fang Changshui, Wang Min
Attorney & Agent: SUN JUN
Abstract:
     Dissolve glycine, sulfuric acid, l-alanine and arsenic acid according to a certain proportion in a given volume of distilled water. Pour the solution into a growth bottle. Cut a slice of seed crystal from ATGSAs or ATGS of good single domain performance, and fix it into the holder. The crystal growth propagates along the (010) plane. Growth period is about 40 days. The method of this invention is simple, safe, efficient and easy to be used extensively.
Time: 3