Title: Multiple impurity-absorbing technique of silicon and multiple impurity-absorbed silicon slice
Application Number: 86104069 Application Date: 1986.06.09
Publication Number: 1008520 Publication Date: 1987.02.11
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B31/06
Applicant(s) Name: Research Inst. No. 44, Ministry of Electron Indust Address:
Inventor(s) Name: Fan Shixu, Fu Youwen, He Weiquan, Xiao Dening
Attorney & Agent: LI QILIANG
Abstract:
     The technique consisting of phosphorous diffusion and multi-layer extention is introduced to gain the silicon featuring impurity-absorbing, defective impurity-absorbing and polycrystal-face impurity-absorbing, suitable for being the substrate slice of coupling device, photoelectricity probing device, MOS-type and TTL-type integrated circuits of various scales and different kinds of silicon device elements. The technique enjoys the advantages of being simple, applicable and low in costs. The devices made of multiple-impurity-absorbing silicon enjoy fine conjunction, low dark current and high rate of finished products.
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