Title: Two-source method and apparatus for multilayer epitaxial GaAs
Application Number: 86104689 Application Date: 1986.07.10
Publication Number: 1016096 Publication Date: 1988.01.27
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B31/00,H01L21/205,H01L21/223
Applicant(s) Name: Yang Ren Address:
Inventor(s) Name:
Attorney & Agent:
Abstract:
     In order to obtain the Te or Sn-doped GaAs multilayer structure, the cut single-crystal wafers of Te or Sn.doped heavyly GaAs are placed as a doping source in an etched zone after the GaAs source of chloride system, and the temp. of the two sources are altered by a magnetic pull-out method to enable multilayer growth. A slow-transition layer growth arised from new layer growing during estabishing new gas-phase compositions in a reactive tube is avoided by means of magnetic pulling-out of the substrates into microetched zone. This method is low-cost, easy to use with safety, performance repeatable and reliable.
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