Title: Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor
Application Number: 86107824 Application Date: 1986.11.12
Publication Number: 1011417 Publication Date: 1987.06.03
Approval Pub. Date: 1990.10.03 Granted Pub. Date: 1990.10.03
International Classifi-cation: C30B31/20;H01L27/14
Applicant(s) Name: Sony Corp. Address:
Inventor(s) Name: Nobuyuki Izawa;Toshihiko Suzuki;Yasaburo Kato
Attorney & Agent: XIAO CHUNJING
Abstract:
    The present invention relates to a method of forming a solid-state image pickup device. A part of Si, which is a component element of a P-type wafer, is converted into P, which is an N-type impurity, by nucleus conversion induced by the application of a neutron beam and an Si substrate 4 whose conductivity type is converted into N-type and whose specific resistivity is 10-100 OMEGA.cm, preferably 40-60 OMEGA.cm, is formed. On the Si substrate obtained as described above, a solid-state image pickup device is formed comprising a number of photodetecting parts, a vertical shift registors, a horizontal shift registor.
Time: 4