Title: Gas phase nitrogen-doping method for straight-pulling monocrystalline silicon
Application Number: 87105811 Application Date: 1987.08.22
Publication Number: 1016643 Publication Date: 1988.02.24
Approval Pub. Date: Granted Pub. Date: 1989.11.08
International Classifi-cation: C30B29/06
Applicant(s) Name: Zhejiang Univ. Address:
Inventor(s) Name:
Attorney & Agent: LIAN SHOUJIN
Abstract:
     The present invention is characterized by the use of 99.99% pure nitrogen or argon-nitrogen mixture as protective atmosphere to carry out gas phase nitrogen-doping for straight pulling monocrystulline silicon. Gas pressure in the furnace is controlled in the range of 5-60 torr. The optimum pressure is 15-25 torr., gas consumption 1-6 cube/hr and optimum gas consumption 2-5 m cube/hr. More than 70% product can be made with nitrogen content 1x10 to the fourteenth-4.5x10 to the fifteenth/cm cube. The process is capable of reducing the cost of protective gas by 40-50%. The obtained slice of silicon has good mechnical performance. Its breaking rate can be reduced by 10-15% in the processing of making semiconductor device.
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