Title: Process for growing shaped single crystals
Application Number: 87108014 Application Date: 1987.11.25
Publication Number: 1018814 Publication Date: 1988.06.08
Approval Pub. Date: 1991.05.15 Granted Pub. Date: 1991.05.15
International Classifi-cation: C30B15/34
Applicant(s) Name: Vsesojuzny Nauchno-Issledovatelsky Proektuo-Konstr Address:
Inventor(s) Name: Dmitry Yakovlevich Kravetsky
Attorney & Agent: TIANG YUE
Abstract:
    A process for growing shaped single crystals of refractory optically transparent metal compounds comprising melting a starting stock in an inert gas atmosphere under the effect of heat evolved by a heater; the melt is continuously fed into a crystallization zone through a capillary system of a shaping unit, followed by pulling a single crystal from the crystallization zone and cooling thereof. Prior to melting of the starting stock one control particle thereof is placed into the crystallization zone and at the moment of melting of said particle the heater power P is recorded. Melting of the starting stock is conducted at a heater power of (1.04-1.1)P, fusing of the seed-at a power of (1.03-1.08)P, building-up of the single crystal-at a power of (1.02-1.08)P; pulling-at a power of (1.02-1.22)P.
Time: 9