Title: Gasification-protecting coat for silicon film during local melting recrystallization
Application Number: 88105362 Application Date: 1988.02.04
Publication Number: 1021129 Publication Date: 1988.09.28
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B13/00,H01L21/30
Applicant(s) Name: Nanjing Engineering Inst. Address:
Inventor(s) Name: Yan Ningxin
Attorney & Agent: LOU GAOCHAO SHEN LIAN
Abstract:
     This invention deals with a gasification-protecting multi-layered structure which can be used to prevent the cover layer of SOI silicon film from failure during its local melting recrystallization procedure. An isolating layer is added between silicon and silicon dioxde to form a multi-layered structure and suppress the generation of gasifying reaction between molten silicon and silicon dioxde. With the invention, not only can the failure of cover layer be prevented, but also reduce the accuracy requirement of temperature control during local melting recrystallization procedure. By the method of local melting recrystallization, a smooth and continuous silicon film on an insulating layer can be obtained.
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