Title: Annealing process of vertically pulled silicon doped by neutron transmutation
Application Number: 88101669 Application Date: 1988.03.26
Publication Number: 1036049 Publication Date: 1989.10.04
Approval Pub. Date: Granted Pub. Date: 1991.10.16
International Classifi-cation: C03B33/02,C30B29/06
Applicant(s) Name: Hebei Polytechnic College Address:
Inventor(s) Name: Ren Bingyan, Xu Yuesheng
Attorney & Agent: LI GUORU LI FENG
Abstract:
     A kind of annealing process of vertically pulled silicon doped by neutron transmutation. The working procedure is: let the natural vertically pulled silicon monocrystalline be doped by neutron transmutation, then, after a washing treatment, feed into a cleaned high temp. diffusion furnace to be hot annealed. This process could be done simultaneously with the heating procedure in the manufacturing of the devices, therefore the necessary man-hours and energy consumption may be saved greatly. The silicon monocrystalline treated by this process is possible to obtain a real life of minority carriers and accurate target resistivity. Using this silicon chip to prepare electronic elements and devices, the acceptance rate and electric parameters of the product can be promoted greatly. Therefore, it is used extensively in the heat treatment of vertically pulled silicon doped by neutron transmutation.
Time: 6
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