Title: Indium mixed mischcrystal zinc diffusion source
Application Number: 88102204 Application Date: 1988.04.11
Publication Number: 1037051 Publication Date: 1989.11.08
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B31/00,C30B35/00,H01L21/22
Applicant(s) Name: Jilin Univ. Address:
Inventor(s) Name: Du Guotong
Attorney & Agent: CUI LIJUAN
Abstract:
     This invention is a kind of material special for making semiconductor devices. Zinc diffusion source of mixed crystal with addition of indium is a kind of Zn impurity diffusion source for making semiconductor devices of GaAs, (AlGa) As materia. This kind of diffusion source is of ternary, quarternary mixed crystal made from three simple substances In, Zn, As or four simple substances In, Zn, Ga, As by thermal chemical combination (mixing). Its advantages are low specific ohmic contact resistance, convenience of use and preparation, easy control of diffusion rate.
Time: 7
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