Title: Process for synthesizing large dimond
Application Number: 88103598 Application Date: 1988.05.07
Publication Number: 1022616 Publication Date: 1988.12.07
Approval Pub. Date: 1992.08.05 Granted Pub. Date: 1992.08.05
International Classifi-cation: C01B31/06;C30B29/04
Applicant(s) Name: Sumitomo Electric Industries Ltd. Address:
Inventor(s) Name: Syuichi Satoh;Tsuji Kazuwo
Attorney & Agent: YANG LIQIN
Abstract:
    A process for synthesizing a large diamond having a diameter of 8 mm or more by the temperature gradient method, wherein a (111) or (100) surface of a seed crystal having a diameter of 3 mm or more is used as a growing surface, the entire area of the growing surface is first dissolved in the diamond-stable region before crystal growth is started, the crystal growth is effected using a plug of a solvent in which the hight of the central portion thereof is higher than the hight of the peripheral portion thereof, the plug of a solvent has a plannar or curved surface on the side where the plug of a solvent contacts a carbon source during the crystal growth, and the crystal growth is effected under such pressure and temperature conditions that the growth of the (111) or (100) surface is predominant.
Time: 12