Title: Growing method of YAG laser crystal doped with Nd and Ce
Application Number: 88102651 Application Date: 1988.05.09
Publication Number: 1030798 Publication Date: 1989.02.01
Approval Pub. Date: Granted Pub. Date: 1991.06.12
International Classifi-cation: C30B15/04,C30B29/28
Applicant(s) Name: Southwest Inst. of Technical Physics Address:
Inventor(s) Name:
Attorney & Agent:
Abstract:
     This invention is involved with a leading growth method of the laser crystal made of YAG doped with Nd and Ce [(Nd, Ce): YAG], which includes selecting the components, heating, as well as choosing growing parameters such as rotation speed, pulling velocity, etc.. Under the condition of undamaging the optical quality of crystal, the invention uses effectively the energy transfer from Ce 3 to Nd 3 , therefore the pulse laser efficiency of (Nd, Ce): YAG can be 70% higher than that of high-grade Nd: YAG. In addition, it has following advantages: low threshold, strong resisting ability to ultraviolet radiation, stable operation in repeat frequency and low requirements to the stability of environmental temp. and cooling. The method is suitable for the middle-and low-energy pulse lasers working in repeat frequency.
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