| Title: | Growth of lithium triborate monocrystal and its use | ||
| Application Number: | 88104838 | Application Date: | 1988.08.11 |
| Publication Number: | 1040228 | Publication Date: | 1990.03.07 |
| Approval Pub. Date: | Granted Pub. Date: | 1993.05.26 | |
| International Classifi-cation: | C30B9/06,C30B29/10 | ||
| Applicant(s) Name: | Artificial Crystal Inst., Bureau of National Build | Address: | |
| Inventor(s) Name: | Huang Chaoen, Zhang Hongwu | ||
| Attorney & Agent: | WEI GYONGJIN | ||
|
|
|
||
Abstract: |
|||
| The present invention refers to the growth and use of lithium triborate (LiB3O5) monocrystal. It illustrated the technology of crystal seed growth of non-linear laser crystal LiB3O5 in fluxing agent at high temp.. The melt to flux ratio (wt.%) is 100:20-100:150 with B2O3 or modified B2O3 as flux and Li2O.3B2O3 as melt. The crystal seed growth period of LiB3O5 at < 834 deg.C is greater than 30 hrs. The side length of the resulting crystal is greater than 10 mm. The conversion rate of the laser frequency multiplier made by the said crystal is 30-50%. | |||
|
|
|||
| Time: | 7 | ||
<- Previous Patent:Method and apparatus using rotary...
| Next Patent:Epitaxial material of gallium pho... ->
|
|||