Title: Epitaxial material of gallium phosphide with high luminescence efficiency
Application Number: 88107405 Application Date: 1988.10.25
Publication Number: 1033714 Publication Date: 1989.07.05
Approval Pub. Date: Granted Pub. Date: 1991.05.01
International Classifi-cation: C30B19/00,H01L29/02,H01L33/00
Applicant(s) Name: Zhejiang Univ. Address:
Inventor(s) Name: Ding Zuchang
Attorney & Agent: LIAN SHOUJIN
Abstract:
     It is a epitaxial material of gallium phosphide with high luminescence efficiency which includes N1-N2-N--P--P five layers. The crystal integrity of epitaxial layers N- and P- is good. The P areagets fully used. The luminescence efficiency is raised by one time under the same condition.
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