Title: Liquid phase epitaxy method and equipment of gallium phosphide
Application Number: 88107717 Application Date: 1988.11.07
Publication Number: 1033222 Publication Date: 1989.05.31
Approval Pub. Date: Granted Pub. Date: 1991.01.30
International Classifi-cation: C30B19/00,H01L21/208
Applicant(s) Name: Zhejiang Univ. Address:
Inventor(s) Name: Ding Zuchang
Attorney & Agent: LIAN SHOUJIN
Abstract:
     In the epitaxy equipment, there is a central passage and a terminal passage. The operating gases entering the reaction area are mixed homogeneously. The doping boat is laid in the central passage and at the room temp. During doping, it is pushed by a magnet into the auxiliary heating zone for the vaporization of dopant and the vaporized dopant is carried to the reaction area directly by the carrier gas. The epitaxial material of gallium phosphide has homogeneous doping, its rate of finished product may reach 80%, and its luminous efficiency may be increased by 100%.
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