Title: Vapour-phase GaAs/InP hetero epitaxial technique
Application Number: 89102308 Application Date: 1989.04.14
Publication Number: 1040401 Publication Date: 1990.03.14
Approval Pub. Date: Granted Pub. Date:
International Classifi-cation: C30B25/02,C30B29/42,H01L21/205
Applicant(s) Name: Jilin Univ. Address:
Inventor(s) Name: Liu Shiyong
Attorney & Agent: CUI LIJUAN
Abstract:
     This technique relates to the growth of GaAs single crystal thin film on InP substrate with chloride VPE system. Through medium layer which protects the non-growth region of substrate, stepped pre-heating and low temp. rapid growth, the thermal damage on InP substrate is suppressed. Controlling the temp. on substrate and the flow of carrier gas hydrogen coordinately, the formed multi-interface stress-releasing layer will stop 3.7% of sloped dislocations caused by lattice mismatch strees at these interfaces. Thus the dislocation density on epitaxy layer will be reduced, and quality of crystallization improved. This process has the merits of simple equipment, easy operation, and the GaAs epitaxy layer has excellent characteri-stics of crystallography. electricity and spectroscopy.
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