Title: Method of controlling nitrogen content in Cz silicon single crystal
Application Number: 89105564 Application Date: 1989.08.10
Publication Number: 1040400 Publication Date: 1990.03.14
Approval Pub. Date: Granted Pub. Date: 1992.07.08
International Classifi-cation: C03B15/02,C30B29/06
Applicant(s) Name: Zhejiang Univ. Address: 310027
Inventor(s) Name: Li Liben
Attorney & Agent: LIAN SHOUJIN
Abstract:
     A method for controlling concn. of nitrogen contained in CZ silicon single crystal is: use high purity nitrogen (over 99.99%) as atmosphere gas, controll its pressure step-by-step in the system of single crystal furnace, esp. When melting silicon the nitrogen pressure must be controlled at 2-15 Torr. The produced single crystal silicon contains nitrogen 1.0X10 to the power 14-7.0c10 to the power 14/cm3, and over 80% of the prods, attain tostandard.
Time: 8
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